(Hong Kong)
Product Summary
The 2N702 is a transistor.
Parametrics
2N702 absolute maximum ratings: (1)Maximum collector power dissipation (Pc): 300mW; (2)Maximum collector-base voltage (Ucb): 25V; (3)Maximum collector-emitter voltage (Uce): 25V; (4)Maximum emitter-base voltage (Ueb): 5V; (5)Maximum collector current (Ic max): 50mA; (6)Maximum junction temperature (Tj): 175℃; (7)Transition frequency (ft): 75MHz; (8)Collector capacitance (Cc), Pf: 6; (9)Forward current transfer ratio (hFE), min/max: 20/60; (10)Manufacturer of 2N702 transistor: ELN; (11)Package of 2N702 transistor: TO18; (12)Application: Low Power, Switching, High Frecvency.
Features
2N702 features: (1)V(BR)CEO (V): 25; (2)V(BR)CBO (V): 25; (3)I(C) Max. (A): 50m; (4)Absolute Max. Power Diss. (W): 300m; (5)Maximum Operating Temp (℃): 175; (6)I(CBO) Max. (A): 500n; (7)@V(CBO) (V) (Test Condition): 10; (8)V(CE)sat Max. (V): 0.5; (9)@I(C) (A) (Test Condition): 10m; (10)@I(B) (A) (Test Condition): 1.0m; (11)h(FE) Min. Current gain: 20; (12)h(FE) Max. Current gain: 60; (13)@I(C) (A) (Test Condition): 10m; (14)@V(CE) (V) (Test Condition): 5.0; (15)f(T) Min. (Hz) Transition Freq: 70M; (16)@I(C) (A) (Test Condition): 10m; (17)@V(CE) (V) (Test Condition): 5.0; (18)C(obo) (Max) (F): 6.0p; (19)@V(CB) (V) (Test Condition): 5.0; (20)@Freq. (Hz) (Test Condition): 1.0M; (21)Package Style: TO-18.
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