Product Summary

The BC847S E6327 is an NPN general-purpose transistor.

Parametrics

BC847S E6327 absolute maximum ratings: (1)Collector-emitter voltage VCEO: 45 V; (2)Collector-base voltage VCBO: 50V; (3)Collector-emitter voltage VCES: 50V; (4)Emitter-base voltage VEBO: 6V; (5)DC collector current IC: 100 mA; (6)Peak collector current ICM: 200mA; (7)Total power dissipation, TS = 115 ℃ Ptot: 250 mW; (8)Junction temperature Tj: 150 ℃; (9)Storage temperature Tstg: -65 to 150℃.

Features

BC847S E6327 features: (1)For AF input stages and driver applications; (2)High current gain; (3)Low collector-emitter saturation voltage; (4)Two ( galvanic) internal isolated Transistors with good matching in one package.

Diagrams

BC847S E6327 block diagram

BC8450
BC8450
Other

Data Sheet
Negotiable 
BC846
BC846
Rectron
Transistors Bipolar (BJT) Ep Trans NPN,0.1A,65V
Data Sheet
0-3000: $0.04
3000-6000: $0.03
6000-12000: $0.03
BC846 T/R
BC846 T/R
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-7
Data Sheet
Negotiable 
BC846A
BC846A
Taiwan Semiconductor
Transistors Bipolar (BJT) Transistor 200mW
Data Sheet
0-3000: $0.02
3000-6000: $0.01
BC846A /T3
BC846A /T3
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-13
Data Sheet
Negotiable 
BC846A,215
BC846A,215
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-7
Data Sheet
0-1: $0.03
1-25: $0.01
25-100: $0.01
100-500: $0.01
500-3000: $0.01