Product Summary

The MT28F160C3FD-9 is a nonvolatile, electrically blockerasable(7flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C3FD-9 is manufactured on 0.22μm process technology in a 48-ball FBGA package. The device has an I/O supply of 2.7V (MIN). Programming in production is accomplished by using high voltage which can be supplied on a separate line. The embedded WORD WRITE and BLOCK ERASE functions of the MT28F160C3FD-9 are fully automated by an on-chip write state machine (WSM), which simplifies these operations and relieves the system processor of secondary tasks. The WSM status can be monitored by an on-chip status register to determine the progress of program/erase tasks.

Parametrics

MT28F160C3FD-9 absolute maximum ratings: (1)Supply Voltage Range, VCC: -0.6V to +4.0V; (2)Supply Voltage Range, VPP: -0.6V to +13.0V; (3)Input Voltage Range: -0.6V to +4.0V; (4)Output Voltage Range: -0.6V to +4.0V; (5)Storage Temperature Range, TSTG: -65℃ to +150℃.

Features

MT28F160C3FD-9 features: (1) Thirty-nine erase blocks; (2)VCC, VCCQ and VPP voltages; (3)Address access times; (4)Low power consumption; (5)Enhanced WRITE/ERASE SUSPEND; (6)128-bit OTP area for security purposes; (7)Industry-standard command set compatibility; (8)Software/hardware block protection.

Diagrams

MT28F160C3FD-9 functional block diagram

MT28800
MT28800
TE Connectivity / Schrack
General Purpose / Industrial Relays METAL CLIP 100
Data Sheet
0-100: $0.81
100-200: $0.76
200-500: $0.71
500-1000: $0.66
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